This title appears in the Scientific Report :
2013
MOCVD and characterization of GaAs layers on Al pseudo-substrates forfuture ultrafast optoelectronics
MOCVD and characterization of GaAs layers on Al pseudo-substrates forfuture ultrafast optoelectronics
GaAs is broadly used in modern electronics. The application of GaAs-based devices in high power electronics, however, is complicated due to the substantial excess heat generated during device operation. One possibility to dissipate the excess heat is to employ substrates with high thermal conductivi...
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Personal Name(s): | von der Ahe, Martina (Corresponding author) |
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Winden, Andreas / Sofer, Zdenek / Mussler, Gregor / Grützmacher, Detlev / Marso, Michel / Hardtdegen, Hilde / Mikulics, Martin | |
Contributing Institute: |
Halbleiter-Nanoelektronik; PGI-9 |
Imprint: |
2013
|
Conference: | 15th European Workshop on Metalorganic Vapour Phase Epitaxie, Aachen (Germany), 2013-06-02 - 2013-06-05 |
Document Type: |
Poster |
Research Program: |
Sensorics and bioinspired systems |
Publikationsportal JuSER |
GaAs is broadly used in modern electronics. The application of GaAs-based devices in high power electronics,
however, is complicated due to the substantial excess heat generated during device operation. One possibility to
dissipate the excess heat is to employ substrates with high thermal conductivity. In this contribution we present
the growth of GaAs layers by metalorganic vapor phase epitaxy (MOVPE) on aluminum (111) pseudosubstrates
designed for an improved heat management in GaAs electronic circuits. They were prepared by Al
evaporation on (100) GaAs substrates and subsequent heat treatment. The GaAs layers are polycrystalline. The
roughnesses of the layers were in the range of 13 to 62 nm and the thickness in the range of 600 – 2300 nm.
The layers exhibit extremely low carrier lifetime due to the growth-induced defects and are suitable for the
fabrication of ultrafast metal-semiconductor-metal (MSM) photodetectors (PDs). |