This title appears in the Scientific Report : 2013 

Innovative fabrication of columnar InxGa1-xN/GaN nanostructures for photovoltaic applications
Haab, Anna (Corresponding author)
Jin, Jiehong / Kardynal, Beata / Mussler, Gregor / Winden, Andreas / Stoica, Toma / Mikulics, Martin / Gr├╝tzmacher, Detlev / Hardtdegen, Hilde
Halbleiter-Nanoelektronik; PGI-9
15th European Workshop on Metalorganic Vapour Phase Epitaxie, Aachen (Germany), 2013-06-02 - 2013-06-05
Frontiers of charge based Electronics
Group III-nitride nanostructures for future generation, high efficient energy device applications were fabricated by capping nanostructured GaN templates with InxGa1-xN grown by metal-organic vapour phase epitaxy (MOVPE) in a concentration range of x between 0 and 1. The nanostructure GaN templates exhibit a high crystallinity and excellent optical properties before overgrowth. After overgrowth a large band gap variation in the solar spectrum could be achieved. The indium concentration in the ternary InxGa1-xN alloy was controllable between x = 0 to 1. The investigations demonstrate that the nanostructures are promising for photovoltaic applications.