This title appears in the Scientific Report :
2013
Innovative fabrication of columnar InxGa1-xN/GaN nanostructures for photovoltaic applications
Innovative fabrication of columnar InxGa1-xN/GaN nanostructures for photovoltaic applications
Group III-nitride nanostructures for future generation, high efficient energy device applications were fabricated by capping nanostructured GaN templates with InxGa1-xN grown by metal-organic vapour phase epitaxy (MOVPE) in a concentration range of x between 0 and 1. The nanostructure GaN templates...
Saved in:
Personal Name(s): | Haab, Anna (Corresponding author) |
---|---|
Jin, Jiehong / Kardynal, Beata / Mussler, Gregor / Winden, Andreas / Stoica, Toma / Mikulics, Martin / Grützmacher, Detlev / Hardtdegen, Hilde | |
Contributing Institute: |
Halbleiter-Nanoelektronik; PGI-9 |
Imprint: |
2013
|
Conference: | 15th European Workshop on Metalorganic Vapour Phase Epitaxie, Aachen (Germany), 2013-06-02 - 2013-06-05 |
Document Type: |
Poster |
Research Program: |
Frontiers of charge based Electronics |
Publikationsportal JuSER |
Group III-nitride nanostructures for future generation, high efficient energy device applications were fabricated
by capping nanostructured GaN templates with InxGa1-xN grown by metal-organic vapour phase epitaxy
(MOVPE) in a concentration range of x between 0 and 1. The nanostructure GaN templates exhibit a high
crystallinity and excellent optical properties before overgrowth. After overgrowth a large band gap variation in
the solar spectrum could be achieved. The indium concentration in the ternary InxGa1-xN alloy was controllable
between x = 0 to 1. The investigations demonstrate that the nanostructures are promising for photovoltaic
applications. |