This title appears in the Scientific Report : 2014 

Amphoteric Nature of Sn in CdS Nanowires
Zhang, Mengyao (Corresponding Author)
Wille, Marcel / Röder, Robert / Heedt, Sebastian / Huang, Liubing / Zhu, Zheng / Geburt, Sebastian / Grützmacher, Detlev / Schäpers, Thomas / Ronning, Carsten / Lu, Jia Grace
Halbleiter-Nanoelektronik; PGI-9
Nano letters, 14 (2014) 2, S. 518 - 523
Washington, DC ACS Publ. 2014
10.1021/nl4035169
Journal Article
Frontiers of charge based Electronics
Please use the identifier: http://dx.doi.org/10.1021/nl4035169 in citations.
High-quality CdS nanowires with uniform Sn doping were synthesized using a Sn-catalyzed chemical vapor deposition method. X-ray diffraction and transmission electron microscopy demonstrate the single crystalline wurtzite structure of the CdS/Sn nanowires. Both donor and acceptor levels, which originate from the amphoteric nature of Sn in II–VI semiconductors, are identified using low-temperature microphotoluminescence. This self-compensation effect was cross examined by gate modulation and temperature-dependent electrical transport measurement. They show an overall n-type behavior with relatively low carrier concentration and low carrier mobilities. Moreover, two different donor levels due to intrinsic and extrinsic doping could be distinguished. They agree well with both the electrical and optical data.