This title appears in the Scientific Report :
2014
Please use the identifier:
http://dx.doi.org/10.1021/nl4035169 in citations.
Amphoteric Nature of Sn in CdS Nanowires
Amphoteric Nature of Sn in CdS Nanowires
High-quality CdS nanowires with uniform Sn doping were synthesized using a Sn-catalyzed chemical vapor deposition method. X-ray diffraction and transmission electron microscopy demonstrate the single crystalline wurtzite structure of the CdS/Sn nanowires. Both donor and acceptor levels, which origin...
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Personal Name(s): | Zhang, Mengyao (Corresponding Author) |
---|---|
Wille, Marcel / Röder, Robert / Heedt, Sebastian / Huang, Liubing / Zhu, Zheng / Geburt, Sebastian / Grützmacher, Detlev / Schäpers, Thomas / Ronning, Carsten / Lu, Jia Grace | |
Contributing Institute: |
Halbleiter-Nanoelektronik; PGI-9 |
Published in: | Nano letters, 14 (2014) 2, S. 518 - 523 |
Imprint: |
Washington, DC
ACS Publ.
2014
|
DOI: |
10.1021/nl4035169 |
Document Type: |
Journal Article |
Research Program: |
Frontiers of charge based Electronics |
Publikationsportal JuSER |
High-quality CdS nanowires with uniform Sn doping were synthesized using a Sn-catalyzed chemical vapor deposition method. X-ray diffraction and transmission electron microscopy demonstrate the single crystalline wurtzite structure of the CdS/Sn nanowires. Both donor and acceptor levels, which originate from the amphoteric nature of Sn in II–VI semiconductors, are identified using low-temperature microphotoluminescence. This self-compensation effect was cross examined by gate modulation and temperature-dependent electrical transport measurement. They show an overall n-type behavior with relatively low carrier concentration and low carrier mobilities. Moreover, two different donor levels due to intrinsic and extrinsic doping could be distinguished. They agree well with both the electrical and optical data. |