This title appears in the Scientific Report : 2013 

GaAs nanowhiskers for femtosecond photodetectors and THz emitters
Mikulics, M. (Corresponding Author)
Zhang, J. / Sobolewski, R. / Adam, Roman / Juul, L. / Marso, M. / Winden, A. / Hardtdegen, H. / Grützmacher, Detlev / Kordos, P.
Halbleiter-Nanoelektronik; PGI-9
JARA-FIT; JARA-FIT
The Ninth International Conference on Advanced Semiconductor Devices and Mircosystems : [Proceedings] - IEEE, 2012. - ISBN 978-1-4673-1198-4978-1-4673-1197-7978-1-4673-1196-0 - doi:10.1109/ASDAM.2012.6418553
IEEE 2012
71-74
10.1109/ASDAM.2012.6418553
2012 International Conference on Advanced Semiconductor Devices & Microsystems (ASDAM), Smolenice (Slovakia), 2012-11-11 - 2012-11-15
Contribution to a book
Contribution to a conference proceedings
Sensorics and bioinspired systems
Please use the identifier: http://dx.doi.org/10.1109/ASDAM.2012.6418553 in citations.
We have developed and characterized ultrafast and highly sensitive photodetectors based on GaAs nanowhiskers fabricated with an improved top-down etching method. We evaluated the material properties of the etched nanowhiskers by micro photoluminescence measurements and studied the effect of post annealing on nanowhiskers' luminescence. The nanowhiskers were integrated into the coplanar striplines for device testing using DC and time-resolved electro-optic characterization techniques. Our photodetectors exhibit a very low dark current below 500 pA at 10 V bias as well as a high responsivity of 0.19 A/W at 30 V, and a cut-off frequency of 1.3 THz. These characteristics make the GaAs nanowhisker photodetectors very promising candidates for high-speed optoelectronics and efficient THz emitters. © 2012 IEEE.