This title appears in the Scientific Report : 2014 

Interaction of C$_{60}$ with clean and hydrogenated SiC-(3×3) probed through the unoccupied electronic states
Bocquet, Francois (Corresponding Author)
Ksari, Y. / Lin, Y. P. / Porte, L. / Themlin, J.-M.
Funktionale Nanostrukturen an Oberflächen; PGI-3
Physical review / B, 88 (2013) 12, S. 125421
College Park, Md. APS 2013
10.1103/PhysRevB.88.125421
Journal Article
Exploratory materials and phenomena
OpenAccess
Please use the identifier: http://hdl.handle.net/2128/10791 in citations.
Please use the identifier: http://dx.doi.org/10.1103/PhysRevB.88.125421 in citations.
The effect of hydrogenation on the conduction bands of the Si-rich 6H-SiC(0001)-(3×3) reconstruction is studied using inverse photoemission spectroscopy in order to distinguish surface from bulk states. These results are exploited for the comparative study of the interaction of C60 adsorbed on (3×3) and on hydrogen-terminated (3×3). For the latter, as in the case of hydrogen-terminated Si, C60 is electronically decoupled from the substrate. Upon annealing a C60 thick film deposited on hydrogenated (3×3) up to 670 K, there is a hint for a possible hydrogen transfer to the C60 molecules. The initially physisorbed molecules then adopt covalent bonding with Si, forming the contact layer. Part of the substrate is already found uncovered at this temperature. By further annealing up to 860 K all H atoms have desorbed. Finally, at 1100 K the remaining covalently bound C60 have desorbed. Unexpectedly, the structural damages caused by H and C60 deposition and by the successive annealing steps do not prevent a final restoration of the initial (3×3) reconstruction at about 1100 K.