This title appears in the Scientific Report :
2014
Please use the identifier:
http://dx.doi.org/10.1109/LED.2014.2340016 in citations.
Interrelation of Sweep and Pulse Analysis of the SET Process in SrTiO$_3$ Resistive Switching Memories
Interrelation of Sweep and Pulse Analysis of the SET Process in SrTiO$_3$ Resistive Switching Memories
In this letter, we present a study of the SET kinetics of bipolar switching SrTiO3-based resistive memory devices. Pulse measurements on a timescale from 1 (mu ) s to 1 s and voltage sweeps with sweep-rates up to 6 MV/s were performed showing a highly nonlinear correlation between voltage and time....
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Personal Name(s): | Fleck, Karsten (Corresponding Author) |
---|---|
Bottger, Ulrich / Waser, Rainer / Menzel, Stephan | |
Contributing Institute: |
Elektronische Materialien; PGI-7 |
Published in: | IEEE electron device letters, 1 (2014) S. 1 - 1 |
Imprint: |
New York, NY
IEEE
2014
|
DOI: |
10.1109/LED.2014.2340016 |
Document Type: |
Journal Article |
Research Program: |
Frontiers of charge based Electronics |
Publikationsportal JuSER |
In this letter, we present a study of the SET kinetics of bipolar switching SrTiO3-based resistive memory devices. Pulse measurements on a timescale from 1 (mu ) s to 1 s and voltage sweeps with sweep-rates up to 6 MV/s were performed showing a highly nonlinear correlation between voltage and time. An analytical model is presented that explains the interrelation of both experiments by a comparative analysis of the current–voltage characteristics. |