This title appears in the Scientific Report :
2003
Please use the identifier:
http://hdl.handle.net/2128/2055 in citations.
Please use the identifier: http://dx.doi.org/10.1109/TASC.2003.814160 in citations.
Transport Properties of SINIS Junctions with High-Current Density
Transport Properties of SINIS Junctions with High-Current Density
We have fabricated Nb/Al2O3/Al/Al2O/Nb devices with different current densities using a conventional fabrication process, varying pressure and oxidation time. Patterning of the multilayers was done using standard photolithography and electron-beam lithography. The current density of SINIS junctions...
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Personal Name(s): | Born, F. |
---|---|
Cassel, D. / Ilin, K. / Klushin, A. M. / Siegel, M. / Brinkmann, A. / Golubov, A. A. / Kupriyanov, M. Y. / Rogalla, H. | |
Contributing Institute: |
Institut für Bio- und Chemosensoren; ISG-2 |
Published in: | IEEE transactions on applied superconductivity, 13 (2003) S. 1079 - 1084 |
Imprint: |
New York, NY
IEEE
2003
|
Physical Description: |
1079 - 1084 |
DOI: |
10.1109/TASC.2003.814160 |
Document Type: |
Journal Article |
Research Program: |
Materialien, Prozesse und Bauelemente für die Mikro- und Nanoelektronik |
Series Title: |
IEEE Transactions on Applied Superconductivity
13 |
Subject (ZB): | |
Link: |
Get full text OpenAccess |
Publikationsportal JuSER |
Please use the identifier: http://dx.doi.org/10.1109/TASC.2003.814160 in citations.
We have fabricated Nb/Al2O3/Al/Al2O/Nb devices with different current densities using a conventional fabrication process, varying pressure and oxidation time. Patterning of the multilayers was done using standard photolithography and electron-beam lithography. The current density of SINIS junctions was changed in the range from 0.5 kA/cm(2) to 20 kA/cm(2). We achieved characteristic voltages up to 0.35 mV. By fabricating sub-mum junction with a width from 0.1 mum to 0.5 mum, we have studied the influence of the asymmetry of barriers on transport properties. By comparing the experimental and theoretical temperature dependence of the characteristic voltage we estimated the barrier transparency and its asymmetry. The comparison shows a good agreement of experimental data with the theoretical model of tunnelling through double-barrier structures in the dirty limit. A new approach for determination of the asymmetry of both barriers based on the measurement of the electrostatic field distribution in the SINIS structure has been developed. |