This title appears in the Scientific Report :
2014
Please use the identifier:
http://hdl.handle.net/2128/8069 in citations.
Please use the identifier: http://dx.doi.org/10.1103/PhysRevB.90.155414 in citations.
Intra- and interband electron scattering in a hybrid topological insulator: Bismuth bilayer on Bi$_{2}$Se$_{3}$
Intra- and interband electron scattering in a hybrid topological insulator: Bismuth bilayer on Bi$_{2}$Se$_{3}$
The band structure and intra- and interband scattering processes of the electrons at the surface of a bismuth bilayer on Bi2Se3 have been experimentally investigated by low-temperature Fourier-transform scanning tunneling spectroscopy. The observed complex quasiparticle interference patterns are com...
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Personal Name(s): | Eich, A. |
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Michiardi, M. / Bihlmayer, G. / Zhu, X.-G. / Mi, J.-L. / Iversen, Bo B. / Wiesendanger, R. / Hofmann, Ph. / Khajetoorians, A. A. / Wiebe, J. (Corresponding Author) | |
Contributing Institute: |
Quanten-Theorie der Materialien; PGI-1 Quanten-Theorie der Materialien; IAS-1 |
Published in: | Physical Review B Physical review / B, 90 90 (2014 2014) 15 15, S. 155414 155414 |
Imprint: |
College Park, Md.
APS
2014
|
DOI: |
10.1103/PhysRevB.90.155414 |
Document Type: |
Journal Article |
Research Program: |
Spin-based and quantum information |
Link: |
OpenAccess |
Publikationsportal JuSER |
Please use the identifier: http://dx.doi.org/10.1103/PhysRevB.90.155414 in citations.
The band structure and intra- and interband scattering processes of the electrons at the surface of a bismuth bilayer on Bi2Se3 have been experimentally investigated by low-temperature Fourier-transform scanning tunneling spectroscopy. The observed complex quasiparticle interference patterns are compared to a simulation based on the spin-dependent joint density of states approach using the surface-localized spectral function calculated from first principles as the only input. Thereby, the origin of the quasiparticle interferences can be traced back to intraband scattering in the bismuth-bilayer valence band and Bi2Se3 conduction band and to interband scattering between the two-dimensional topological state and the bismuth-bilayer valence band. The investigation reveals that the bilayer band gap, which is predicted to host one-dimensional topological states at the edges of the bilayer, is pushed several hundred meV above the Fermi level. This result is rationalized by an electron transfer from the bilayer to Bi2Se3 which also leads to a two-dimensional electron state in the Bi2Se3 conduction band with a strong Rashba spin splitting, coexisting with the topological state and bilayer valence band |