This title appears in the Scientific Report :
2011
Please use the identifier:
http://dx.doi.org/10.1063/1.3644084 in citations.
Please use the identifier: http://hdl.handle.net/2128/7359 in citations.
Hard x-ray photoelectron spectroscopy study of the buried Si/ZnO thin-film solar cell interface: Direct evidence for the formation of Si-O at the expense of Zn-O bonds
Hard x-ray photoelectron spectroscopy study of the buried Si/ZnO thin-film solar cell interface: Direct evidence for the formation of Si-O at the expense of Zn-O bonds
The chemical structure of the interface between silicon thin films and the transparent conductive oxide ZnO:Al has been investigated by hard x-ray photoelectron spectroscopy. By varying the excitation energy between 2010 and 8040 eV, we were able to probe the Si/ZnO interface buried below 12 nm Si....
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Personal Name(s): | Wimmer, M. |
---|---|
Baer, M. / Gerlach, D. / Wilks, R. G. / Scherf, S. / Lupulescu, C. / Ruske, F. / Felix, R. / Huepkes, J. / Gavrila, G. / Gorgoi, M. / Lips, K. / Eberhardt, W. / Rech, B. | |
Contributing Institute: |
Photovoltaik; IEK-5 |
Published in: | Applied physics letters, 99 (2011) S. 152104 |
Imprint: |
Melville, NY
American Institute of Physics
2011
|
Physical Description: |
152104 |
DOI: |
10.1063/1.3644084 |
Document Type: |
Journal Article |
Research Program: |
Erneuerbare Energien |
Series Title: |
Applied Physics Letters
99 |
Subject (ZB): | |
Link: |
Get full text Published under German "Allianz" Licensing conditions on 2011-10-11. Available in OpenAccess from 2011-10-11 |
Publikationsportal JuSER |
Please use the identifier: http://hdl.handle.net/2128/7359 in citations.
The chemical structure of the interface between silicon thin films and the transparent conductive oxide ZnO:Al has been investigated by hard x-ray photoelectron spectroscopy. By varying the excitation energy between 2010 and 8040 eV, we were able to probe the Si/ZnO interface buried below 12 nm Si. This allowed for the identification of changes induced by solid phase crystallization (SPC). Based on in-situ SPC annealing experiments, we find clear indications that the formation of Si-O bonds takes place at the expense of Zn-O bonds. Hence, the ZnO:Al acts as the oxygen source for the interfacial Si oxidation. (C) 2011 American Institute of Physics. [doi:10.1063/1.3644084] |