This title appears in the Scientific Report :
2011
Please use the identifier:
http://dx.doi.org/10.1080/14786435.2010.512578 in citations.
Electrical resistivity of the u-Al4Mn giant-unit-cell complex metallic alloy
Electrical resistivity of the u-Al4Mn giant-unit-cell complex metallic alloy
The mu-Al4Mn complex intermetallic phase with 563 atoms in its giant unit cell exhibits a complicated temperature dependence of electrical resistivity that has a broad maximum at about 175 K and a minimum at 13 K. The temperature dependence of the resistivity was reproduced by employing the theory o...
Saved in:
Personal Name(s): | Wencka, M. |
---|---|
Jazbec, S. / Jagli, Z. / Vrtnik, M. / Feuerbacher, M. / Heggen, M. / Roitsch, S. / Dolinsek, J. | |
Contributing Institute: |
Mikrostrukturforschung; PGI-5 |
Published in: |
Philosophical magazine |
Imprint: |
London [u.a.]
Taylor and Francis
2011
|
DOI: |
10.1080/14786435.2010.512578 |
Document Type: |
Journal Article |
Research Program: |
Kondensierte Materie |
Series Title: |
Philosophical Magazine
91 |
Subject (ZB): | |
Publikationsportal JuSER |
The mu-Al4Mn complex intermetallic phase with 563 atoms in its giant unit cell exhibits a complicated temperature dependence of electrical resistivity that has a broad maximum at about 175 K and a minimum at 13 K. The temperature dependence of the resistivity was reproduced by employing the theory of quantum transport of slow charge carriers, which predicts a crossover from the metallic (Boltzmann-type) positive-temperature-coefficient electrical resistivity at low temperatures to the insulator-like (non-Boltzmann) negative-temperature-coefficient resistivity at elevated temperatures. The low-temperature resistivity minimum was reproduced by considering it as a magnetic effect due to increased scattering of the conduction electrons by the Mn spins on approaching the spin glass phase that develops below the spin freezing temperature T-f = 2.7 K. |