This title appears in the Scientific Report :
2011
Please use the identifier:
http://dx.doi.org/10.1021/jp204240n in citations.
Identifying Molecular Orbital Energies by Distance-Dependent Transition Voltage Spectroscopy
Identifying Molecular Orbital Energies by Distance-Dependent Transition Voltage Spectroscopy
Besides current-voltage spectroscopy, also transition voltage spectroscopy (TVS) becomes an interesting tool to investigate the energetic position of the molecular orbitals involved in the tunneling process. We used scanning tunneling spectroscopy to perform both spectroscopy techniques as a functio...
Saved in:
Personal Name(s): | Lennartz, M. C. |
---|---|
Atodiresei, N. / Caciuc, V. / Karthäuser, S. | |
Contributing Institute: |
Quanten-Theorie der Materialien; PGI-1 Jülich-Aachen Research Alliance - Simulation Sciences; JARA-SIM JARA-FIT; JARA-FIT Quanten-Theorie der Materialien; IAS-1 Elektronische Materialien; PGI-7 |
Published in: |
The @journal of physical chemistry |
Imprint: |
Washington, DC
Soc.
2011
|
Physical Description: |
15025 - 15030 |
DOI: |
10.1021/jp204240n |
Document Type: |
Journal Article |
Research Program: |
Grundlagen für zukünftige Informationstechnologien |
Series Title: |
Journal of Physical Chemistry C
115 |
Subject (ZB): | |
Publikationsportal JuSER |
Besides current-voltage spectroscopy, also transition voltage spectroscopy (TVS) becomes an interesting tool to investigate the energetic position of the molecular orbitals involved in the tunneling process. We used scanning tunneling spectroscopy to perform both spectroscopy techniques as a function of the tip-substrate distance. Employing our model system, benzoic acid on a Cu(110) surface, we could observe a step in the transition voltage using distance-dependent TVS. Combining the spectroscopic results with density functional theory based calculations, it was possible to identify the molecular orbitals responsible for charge transport. Moreover, it was found that different molecular orbitals are responsible for charge transport if varying STM tip-substrate distances are examined. |