This title appears in the Scientific Report :
2011
Please use the identifier:
http://dx.doi.org/10.1063/1.3631026 in citations.
Please use the identifier: http://hdl.handle.net/2128/7461 in citations.
Effect of Si-doping on InAs nanowire transport and morphology
Effect of Si-doping on InAs nanowire transport and morphology
The effect of Si-doping on the morphology, structure, and transport properties of nanowires was investigated. The nanowires were deposited by selective-area metal organic vapor phase epitaxy in an N-2 ambient. It is observed that doping systematically affects the nanowire morphology but not the stru...
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Personal Name(s): | Wirths, S. |
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Weis, K. / Winden, A. / Sladek, K. / Volk, C. / Alagha, S. / Weirich, T.E. / von der Ahe, M. / Hardtdegen, H. / Lüth, H. / Demarina, N. / Grützmacher, D. / Schäpers, Th. | |
Contributing Institute: |
JARA-FIT; JARA-FIT Halbleiter-Nanoelektronik; PGI-9 |
Published in: | Journal of applied physics, 110 (2011) S. 053709 |
Imprint: |
Melville, NY
American Institute of Physics
2011
|
Physical Description: |
053709 |
DOI: |
10.1063/1.3631026 |
Document Type: |
Journal Article |
Research Program: |
Grundlagen für zukünftige Informationstechnologien |
Series Title: |
Journal of Applied Physics
110 |
Subject (ZB): | |
Link: |
Get full text Published under German "Allianz" Licensing conditions on 2011-09-12. Available in OpenAccess from 2011-09-12 |
Publikationsportal JuSER |
Please use the identifier: http://hdl.handle.net/2128/7461 in citations.
The effect of Si-doping on the morphology, structure, and transport properties of nanowires was investigated. The nanowires were deposited by selective-area metal organic vapor phase epitaxy in an N-2 ambient. It is observed that doping systematically affects the nanowire morphology but not the structure of the nanowires. However, the transport properties of the wires are greatly affected. Room-temperature four-terminal measurements show that with an increasing dopant supply the conductivity monotonously increases. For the highest doping level the conductivity is higher by a factor of 25 compared to only intrinsically doped reference nanowires. By means of back-gate field-effect transistor measurements it was confirmed that the doping results in an increased carrier concentration. Temperature dependent resistance measurements reveal, for lower doping concentrations, a thermally activated semiconductor-type increase of the conductivity. In contrast, the nanowires with the highest doping concentration show a metal-type decrease of the resistivity with decreasing temperature. (C) 2011 American Institute of Physics. [doi: 10.1063/1.3631026] |