This title appears in the Scientific Report : 2011 

Effect of Si-doping on InAs nanowire transport and morphology
Wirths, S.
Weis, K. / Winden, A. / Sladek, K. / Volk, C. / Alagha, S. / Weirich, T.E. / von der Ahe, M. / Hardtdegen, H. / Lüth, H. / Demarina, N. / Grützmacher, D. / Schäpers, Th.
JARA-FIT; JARA-FIT
Halbleiter-Nanoelektronik; PGI-9
Journal of applied physics, 110 (2011) S. 053709
Melville, NY American Institute of Physics 2011
053709
10.1063/1.3631026
Journal Article
Grundlagen für zukünftige Informationstechnologien
Journal of Applied Physics 110
J
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Published under German "Allianz" Licensing conditions on 2011-09-12. Available in OpenAccess from 2011-09-12
Please use the identifier: http://dx.doi.org/10.1063/1.3631026 in citations.
Please use the identifier: http://hdl.handle.net/2128/7461 in citations.
The effect of Si-doping on the morphology, structure, and transport properties of nanowires was investigated. The nanowires were deposited by selective-area metal organic vapor phase epitaxy in an N-2 ambient. It is observed that doping systematically affects the nanowire morphology but not the structure of the nanowires. However, the transport properties of the wires are greatly affected. Room-temperature four-terminal measurements show that with an increasing dopant supply the conductivity monotonously increases. For the highest doping level the conductivity is higher by a factor of 25 compared to only intrinsically doped reference nanowires. By means of back-gate field-effect transistor measurements it was confirmed that the doping results in an increased carrier concentration. Temperature dependent resistance measurements reveal, for lower doping concentrations, a thermally activated semiconductor-type increase of the conductivity. In contrast, the nanowires with the highest doping concentration show a metal-type decrease of the resistivity with decreasing temperature. (C) 2011 American Institute of Physics. [doi: 10.1063/1.3631026]