This title appears in the Scientific Report : 2012 

Non-uniform distribution of induced strain in a gate recessed AlGaN/GaN structure evaluated by micro-PL measurements
Mikulics, M.
Hardtdegen, H. / Gregusová, D. / Sofer, Z. / Simek, P. / Trellenkamp, St. / Grützmacher, D. / Lüth, H. / Kordos, P. / Marso, M.
JARA-FIT; JARA-FIT
Halbleiter-Nanoelektronik; PGI-9
Semiconductor science and technology, 27 (2012) S. 105008
Bristol IOP Publ. 2012
105008
10.1088/0268-1242/27/10/105008
Journal Article
Grundlagen für zukünftige Informationstechnologien
Semiconductor Science and Technology 27
J
Please use the identifier: http://dx.doi.org/10.1088/0268-1242/27/10/105008 in citations.
Micro-photoluminescence (mu-PL) studies were performed on AlGaN/GaN heterostructure field effect transistors (HFETs) with different gate-recessing depths. It was found that mu-PL is the method of choice for detecting dry etching damage and simultaneously recording strain and stress in the HFET GaN layer. Lateral sub-mu m resolved mapping shows that the strain in the GaN layer after recessing is partially relaxed and non-uniform.