This title appears in the Scientific Report :
2012
Please use the identifier:
http://dx.doi.org/10.1088/0268-1242/27/10/105008 in citations.
Non-uniform distribution of induced strain in a gate recessed AlGaN/GaN structure evaluated by micro-PL measurements
Non-uniform distribution of induced strain in a gate recessed AlGaN/GaN structure evaluated by micro-PL measurements
Micro-photoluminescence (mu-PL) studies were performed on AlGaN/GaN heterostructure field effect transistors (HFETs) with different gate-recessing depths. It was found that mu-PL is the method of choice for detecting dry etching damage and simultaneously recording strain and stress in the HFET GaN l...
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Personal Name(s): | Mikulics, M. |
---|---|
Hardtdegen, H. / Gregusová, D. / Sofer, Z. / Simek, P. / Trellenkamp, St. / Grützmacher, D. / Lüth, H. / Kordos, P. / Marso, M. | |
Contributing Institute: |
JARA-FIT; JARA-FIT Halbleiter-Nanoelektronik; PGI-9 |
Published in: | Semiconductor science and technology, 27 (2012) S. 105008 |
Imprint: |
Bristol
IOP Publ.
2012
|
Physical Description: |
105008 |
DOI: |
10.1088/0268-1242/27/10/105008 |
Document Type: |
Journal Article |
Research Program: |
Grundlagen für zukünftige Informationstechnologien |
Series Title: |
Semiconductor Science and Technology
27 |
Subject (ZB): | |
Publikationsportal JuSER |
Micro-photoluminescence (mu-PL) studies were performed on AlGaN/GaN heterostructure field effect transistors (HFETs) with different gate-recessing depths. It was found that mu-PL is the method of choice for detecting dry etching damage and simultaneously recording strain and stress in the HFET GaN layer. Lateral sub-mu m resolved mapping shows that the strain in the GaN layer after recessing is partially relaxed and non-uniform. |