This title appears in the Scientific Report : 2012 

Residual strain in recessed AlGaN/GaN heterostructure field-effect transistors evaluated by micro photoluminescence measurements
Mikulics, M.
Hardtdegen, H. / Winden, A. / Fox, A. / Marso, M. / Sofer, Z. / Lüth, H. / Grützmacher, D. / Kordos, P.
JARA-FIT; JARA-FIT
Halbleiter-Nanoelektronik; PGI-9
Physica status solidi / C, 9 (2012) S. 911-914
Berlin Wiley-VCH 2012
911-914
10.1002/pssc.201100408
Journal Article
Grundlagen für zukünftige Informationstechnologien
Physica Status Solidi C 9
Please use the identifier: http://dx.doi.org/10.1002/pssc.201100408 in citations.
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