This title appears in the Scientific Report :
2002
Modelling of polarization charge induced asymmetry of IV-characteristics for AlN/GaN based resonant tunneling structures
Modelling of polarization charge induced asymmetry of IV-characteristics for AlN/GaN based resonant tunneling structures
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Personal Name(s): | Indlekofer, K. M. |
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Donà, E. / Malindretos, J. / Bertelli, M. / Kocan, M. / Rizzi, A. / Lüth, H. | |
Contributing Institute: |
Institut für Halbleiterschichten und Bauelemente; ISG-1 |
Published in: | Physica status solidi / B, 234 (2002) S. 769 - 772 |
Imprint: |
Weinheim
Wiley-VCH
2002
|
Physical Description: |
769 - 772 |
Document Type: |
Journal Article |
Research Program: |
Materialien, Prozesse und Bauelemente für die Mikro- und Nanoelektronik |
Series Title: |
PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS
234 |
Publikationsportal JuSER |
Description not available. |