This title appears in the Scientific Report :
2015
Please use the identifier:
http://dx.doi.org/10.1038/ncomms9610 in citations.
Please use the identifier: http://hdl.handle.net/2128/9355 in citations.
Spectromicroscopic insights for rational design of redox-based memristive devices
Spectromicroscopic insights for rational design of redox-based memristive devices
The demand for highly scalable, low-power devices for data storage and logic operations is strongly stimulating research into resistive switching as a novel concept for future non-volatile memory devices. To meet technological requirements, it is imperative to have a set of material design rules bas...
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Personal Name(s): | Baeumer, Christoph (Corresponding author) |
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Schmitz, Christoph / Ramadan, Amr H. H. / Du, Hongchu / Skaja, Katharina / Feyer, Vitaliy / Müller, Philipp / Arndt, Benedikt / Jia, Chun-Lin / Mayer, Joachim / De Souza, Roger A. / Michael Schneider, Claus / Waser, Rainer / Dittmann, Regina | |
Contributing Institute: |
Elektronische Materialien; PGI-7 JARA-FIT; JARA-FIT Mikrostrukturforschung; PGI-5 Elektronische Eigenschaften; PGI-6 |
Published in: | Nature Communications, 6 (2015) S. 8610 - |
Imprint: |
London
Nature Publishing Group
2015
|
DOI: |
10.1038/ncomms9610 |
PubMed ID: |
26477940 |
Document Type: |
Journal Article |
Research Program: |
Controlling Electron Charge-Based Phenomena |
Link: |
OpenAccess OpenAccess |
Publikationsportal JuSER |
Please use the identifier: http://hdl.handle.net/2128/9355 in citations.
The demand for highly scalable, low-power devices for data storage and logic operations is strongly stimulating research into resistive switching as a novel concept for future non-volatile memory devices. To meet technological requirements, it is imperative to have a set of material design rules based on fundamental material physics, but deriving such rules is proving challenging. Here, we elucidate both switching mechanism and failure mechanism in the valence-change model material SrTiO3, and on this basis we derive a design rule for failure-resistant devices. Spectromicroscopy reveals that the resistance change during device operation and failure is indeed caused by nanoscale oxygen migration resulting in localized valence changes between Ti4+ and Ti3+. While fast reoxidation typically results in retention failure in SrTiO3, local phase separation within the switching filament stabilizes the retention. Mimicking this phase separation by intentionally introducing retention-stabilization layers with slow oxygen transport improves retention times considerably. |