This title appears in the Scientific Report :
2015
Please use the identifier:
http://dx.doi.org/10.1016/j.jcrysgro.2015.03.043 in citations.
InAs nanowires with Al$_x$Ga$_{1−x}$Sb shells for band alignment engineering
InAs nanowires with Al$_x$Ga$_{1−x}$Sb shells for band alignment engineering
InAs nanowires surrounded by AlxGa1−xSb shells exhibit a change in the band alignment from a broken gap for pure GaSb shells to a staggered type II alignment for AlSb. These different band alignments make InAs/AlxGa1−xSb core–shell nanowires ideal candidates for several applications such as TFETs an...
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Personal Name(s): | Rieger, Torsten (Corresponding author) |
---|---|
Grützmacher, Detlev / Lepsa, Mihail Ion | |
Contributing Institute: |
Halbleiter-Nanoelektronik; PGI-9 |
Published in: | Journal of crystal growth, 425 (2015) S. 80 - 84 |
Imprint: |
Amsterdam [u.a.]
Elsevier
2015
|
DOI: |
10.1016/j.jcrysgro.2015.03.043 |
Document Type: |
Journal Article |
Research Program: |
Controlling Electron Charge-Based Phenomena |
Publikationsportal JuSER |
LEADER | 04995nam a2200709 a 4500 | ||
---|---|---|---|
001 | 279869 | ||
005 | 20210129221144.0 | ||
024 | 7 | |a 10.1016/j.jcrysgro.2015.03.043 |2 doi | |
024 | 7 | |a 0022-0248 |2 ISSN | |
024 | 7 | |a 1873-5002 |2 ISSN | |
024 | 7 | |a WOS:000356669200019 |2 WOS | |
037 | |a FZJ-2015-07745 | ||
041 | |a English | ||
082 | |a 540 | ||
100 | 1 | |a Rieger, Torsten |0 P:(DE-Juel1)141766 |b 0 |e Corresponding author |u fzj | |
245 | |a InAs nanowires with Al$_x$Ga$_{1−x}$Sb shells for band alignment engineering | ||
260 | |a Amsterdam [u.a.] |c 2015 |b Elsevier | ||
520 | |a InAs nanowires surrounded by AlxGa1−xSb shells exhibit a change in the band alignment from a broken gap for pure GaSb shells to a staggered type II alignment for AlSb. These different band alignments make InAs/AlxGa1−xSb core–shell nanowires ideal candidates for several applications such as TFETs and passivated InAs nanowires. With increasing the Al content in the shell, the axial growth is simultaneously enhanced changing the morphological characteristics of the top region. Nonetheless, for Al contents ranging from 0 to 100 % conformal overgrowth of the InAs nanowires was observed. AlGaSb shells were found to have a uniform composition along the nanowire axis. High Al content shells require an additional passivation with GaSb to prevent complete oxidation of the AlSb. Irrespective of the lattice mismatch being 1.2% between InAs and AlSb, the shell growth was found to be coherent. | ||
588 | |a Dataset connected to CrossRef | ||
700 | 1 | |a Grützmacher, Detlev |0 P:(DE-Juel1)125588 |b 1 |u fzj | |
700 | 1 | |a Lepsa, Mihail Ion |0 P:(DE-Juel1)128603 |b 2 |u fzj | |
773 | |a 10.1016/j.jcrysgro.2015.03.043 |g Vol. 425, p. 80 - 84 |0 PERI:(DE-600)1466514-1 |p 80 - 84 |t Journal of crystal growth |v 425 |y 2015 |x 0022-0248 | ||
856 | 4 | |u http://juser.fz-juelich.de/record/279869/files/1-s2.0-S0022024815002675-main.pdf |y Restricted | |
856 | 4 | |x icon |u http://juser.fz-juelich.de/record/279869/files/1-s2.0-S0022024815002675-main.gif?subformat=icon |y Restricted | |
856 | 4 | |x icon-1440 |u http://juser.fz-juelich.de/record/279869/files/1-s2.0-S0022024815002675-main.jpg?subformat=icon-1440 |y Restricted | |
856 | 4 | |x icon-180 |u http://juser.fz-juelich.de/record/279869/files/1-s2.0-S0022024815002675-main.jpg?subformat=icon-180 |y Restricted | |
856 | 4 | |x icon-640 |u http://juser.fz-juelich.de/record/279869/files/1-s2.0-S0022024815002675-main.jpg?subformat=icon-640 |y Restricted | |
856 | 4 | |x pdfa |u http://juser.fz-juelich.de/record/279869/files/1-s2.0-S0022024815002675-main.pdf?subformat=pdfa |y Restricted | |
909 | C | O | |o oai:juser.fz-juelich.de:279869 |p VDB |
910 | 1 | |a Forschungszentrum Jülich GmbH |0 I:(DE-588b)5008462-8 |k FZJ |b 0 |6 P:(DE-Juel1)141766 | |
910 | 1 | |a Forschungszentrum Jülich GmbH |0 I:(DE-588b)5008462-8 |k FZJ |b 1 |6 P:(DE-Juel1)125588 | |
910 | 1 | |a Forschungszentrum Jülich GmbH |0 I:(DE-588b)5008462-8 |k FZJ |b 2 |6 P:(DE-Juel1)128603 | |
913 | 1 | |a DE-HGF |b Key Technologies |l Future Information Technology - Fundamentals, Novel Concepts and Energy Efficiency (FIT) |1 G:(DE-HGF)POF3-520 |0 G:(DE-HGF)POF3-521 |2 G:(DE-HGF)POF3-500 |v Controlling Electron Charge-Based Phenomena |x 0 |4 G:(DE-HGF)POF |3 G:(DE-HGF)POF3 | |
914 | 1 | |y 2015 | |
915 | |a DBCoverage |0 StatID:(DE-HGF)0200 |2 StatID |b SCOPUS | ||
915 | |a JCR |0 StatID:(DE-HGF)0100 |2 StatID |b J CRYST GROWTH : 2014 | ||
915 | |a DBCoverage |0 StatID:(DE-HGF)0150 |2 StatID |b Web of Science Core Collection | ||
915 | |a WoS |0 StatID:(DE-HGF)0110 |2 StatID |b Science Citation Index | ||
915 | |a WoS |0 StatID:(DE-HGF)0111 |2 StatID |b Science Citation Index Expanded | ||
915 | |a IF < 5 |0 StatID:(DE-HGF)9900 |2 StatID | ||
915 | |a No Authors Fulltext |0 StatID:(DE-HGF)0550 |2 StatID | ||
915 | |a DBCoverage |0 StatID:(DE-HGF)1150 |2 StatID |b Current Contents - Physical, Chemical and Earth Sciences | ||
915 | |a DBCoverage |0 StatID:(DE-HGF)0310 |2 StatID |b NCBI Molecular Biology Database | ||
915 | |a DBCoverage |0 StatID:(DE-HGF)0300 |2 StatID |b Medline | ||
915 | |a Nationallizenz |0 StatID:(DE-HGF)0420 |2 StatID | ||
915 | |a DBCoverage |0 StatID:(DE-HGF)0199 |2 StatID |b Thomson Reuters Master Journal List | ||
980 | |a journal | ||
980 | |a VDB | ||
980 | |a UNRESTRICTED | ||
980 | |a I:(DE-Juel1)PGI-9-20110106 | ||
536 | |a Controlling Electron Charge-Based Phenomena |0 G:(DE-HGF)POF3-521 |c POF3-521 |f POF III |x 0 | ||
336 | |a ARTICLE |2 BibTeX | ||
336 | |a Nanopartikel unedler Metalle (Mg0, Al0, Gd0, Sm0) |0 0 |2 EndNote | ||
336 | |a Output Types/Journal article |2 DataCite | ||
336 | |a Journal Article |b journal |m journal |0 PUB:(DE-HGF)16 |s 1453391369_2879 |2 PUB:(DE-HGF) | ||
336 | |a article |2 DRIVER | ||
336 | |a JOURNAL_ARTICLE |2 ORCID | ||
920 | |l yes | ||
920 | |k Halbleiter-Nanoelektronik; PGI-9 |0 I:(DE-Juel1)PGI-9-20110106 |l Halbleiter-Nanoelektronik |x 0 | ||
990 | |a Rieger, Torsten |0 P:(DE-Juel1)141766 |b 0 |e Corresponding author |u fzj | ||
991 | |a Lepsa, Mihail Ion |0 P:(DE-Juel1)128603 |b 2 |u fzj | ||
991 | |a Grützmacher, Detlev |0 P:(DE-Juel1)125588 |b 1 |u fzj |