This title appears in the Scientific Report : 2016 

Self-Diffusion in Amorphous Silicon
Strauß, Florian (Corresponding author)
Dörrer, Lars / Geue, Thomas / Stahn, Jochen / Koutsioumpas, Alexandros / Mattauch, Stefan / Schmidt, Harald
JARA-FIT; JARA-FIT
Streumethoden; PGI-4
Streumethoden; JCNS-2
JCNS-FRM-II; JCNS-FRM-II
Physical review letters, 116 (2016) 2, S. 025901
College Park, Md. APS 2016
10.1103/PhysRevLett.116.025901
Journal Article
Jülich Centre for Neutron Research (JCNS)
FRM II / MLZ
Energy > 0
OpenAccess
OpenAccess
OpenAccess
OpenAccess
Please use the identifier: http://hdl.handle.net/2128/9806 in citations.
Please use the identifier: http://dx.doi.org/10.1103/PhysRevLett.116.025901 in citations.
The present Letter reports on self-diffusion in amorphous silicon. Experiments were done on Si29/Sinat heterostructures using neutron reflectometry and secondary ion mass spectrometry. The diffusivities follow the Arrhenius law in the temperature range between 550 and 700 °C with an activation energy of (4.4±0.3)  eV. In comparison with single crystalline silicon the diffusivities are tremendously higher by 5 orders of magnitude at about 700 °C, which can be interpreted as the consequence of a high diffusion entropy.