This title appears in the Scientific Report :
2016
Please use the identifier:
http://hdl.handle.net/2128/9806 in citations.
Please use the identifier: http://dx.doi.org/10.1103/PhysRevLett.116.025901 in citations.
Self-Diffusion in Amorphous Silicon
Self-Diffusion in Amorphous Silicon
The present Letter reports on self-diffusion in amorphous silicon. Experiments were done on Si29/Sinat heterostructures using neutron reflectometry and secondary ion mass spectrometry. The diffusivities follow the Arrhenius law in the temperature range between 550 and 700 °C with an activation energ...
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Personal Name(s): | Strauß, Florian (Corresponding author) |
---|---|
Dörrer, Lars / Geue, Thomas / Stahn, Jochen / Koutsioumpas, Alexandros / Mattauch, Stefan / Schmidt, Harald | |
Contributing Institute: |
JARA-FIT; JARA-FIT Streumethoden; PGI-4 Streumethoden; JCNS-2 JCNS-FRM-II; JCNS-FRM-II |
Published in: | Physical review letters, 116 (2016) 2, S. 025901 |
Imprint: |
College Park, Md.
APS
2016
|
DOI: |
10.1103/PhysRevLett.116.025901 |
Document Type: |
Journal Article |
Research Program: |
Jülich Centre for Neutron Research (JCNS) FRM II / MLZ |
Subject (ZB): | |
Link: |
OpenAccess OpenAccess OpenAccess OpenAccess |
Publikationsportal JuSER |
Please use the identifier: http://dx.doi.org/10.1103/PhysRevLett.116.025901 in citations.
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