This title appears in the Scientific Report : 2000 

Growth of thin, crystalline oxide, nitride and oxynitride films on metal and metal alloy surfaces
Franchy, R.
Institut für Grenzflächenforschung und Vakuumphysik; IGV
Surface science reports, 38 (2000) S. 195 - 294
Amsterdam [u.a.] Elsevier Science 2000
195 - 294
Journal Article
Struktur und Dynamik der Grenzflächen
Surface Science Reports 38
J
This paper reviews the current knowledge of the properties of ultrathin, well-ordered oxide, nitride and oxynitride films grown on metal and metal alloy surfaces. Different modes of preparation are discussed and the vibrational and structural properties are summarized. The focus will be put onto Al-oxides grown on surfaces of the intermetallic alloys NiAl, Ni3Al and FeAl. The properties of Ga2O3 grown on surfaces of the intermetallic alloy CoGa are also described. In these cases Al- and Ga-atoms, respectively, segregate from the substrate and react with adsorbed oxygen. The grown Al- and Ga-oxide films, respectively, order at elevated temperatures. Systems are also discussed where ill-oxide is grown by oxidation of Al-atoms which are evaporated on surfaces of the transition metals Re and Ru. The growth of transition metal oxides CoO (1 1 1)/Co (0 0 0 1), CoO (1 0 0)/Co (1 1 2 0), NiO (1 0 0)/Ni (1 0 0), NiO/Ni (1 1 1) and Cr2O3/Cr (1 1 0) are also presented. Thin films of Al- and Ga-nitride, respectively, can be grown on the base of the intermetallic alloy NiAl and CoGa by low-temperature adsorption of ammonia. These nitride films order at elevated temperatures. Al- and Ga-oxynitride, respectively, can be grown on surfaces of NiAl and CoGa substrates by adsorption on nitric oxide. An ordering of these ultrathin oxynitride layers is observed at elevated temperatures. (C) 2000 Elsevier Science B.V. All rights reserved.