This title appears in the Scientific Report :
2015
Please use the identifier:
http://hdl.handle.net/2128/9748 in citations.
Please use the identifier: http://dx.doi.org/10.1103/PhysRevLett.115.066801 in citations.
Surface and Step Conductivities on Si(111) Surfaces
Surface and Step Conductivities on Si(111) Surfaces
Four-point measurements using a multitip scanning tunneling microscope are carried out in order to determine surface and step conductivities on Si(111) surfaces. In a first step, distance-dependent four-point measurements in the linear configuration are used in combination with an analytical three-l...
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Personal Name(s): | Just, Sven (Corresponding author) |
---|---|
Blab, Marcus / Korte, Stefan / Cherepanov, Vasily / Soltner, Helmut / Voigtländer, Bert (Corresponding author) | |
Contributing Institute: |
JARA-FIT; JARA-FIT Quantum Nanoscience; PGI-3 |
Published in: | Physical review letters, 115 (2015) 6, S. 066801 |
Imprint: |
College Park, Md.
APS
2015
|
DOI: |
10.1103/PhysRevLett.115.066801 |
Document Type: |
Journal Article |
Research Program: |
Controlling Electron Charge-Based Phenomena |
Link: |
OpenAccess OpenAccess |
Publikationsportal JuSER |
Please use the identifier: http://dx.doi.org/10.1103/PhysRevLett.115.066801 in citations.
Four-point measurements using a multitip scanning tunneling microscope are carried out in order to determine surface and step conductivities on Si(111) surfaces. In a first step, distance-dependent four-point measurements in the linear configuration are used in combination with an analytical three-layer model for charge transport to disentangle the 2D surface conductivity from nonsurface contributions. A termination of the Si(111) surface with either Bi or H results in the two limiting cases of a pure 2D or 3D conductance, respectively. In order to further disentangle the surface conductivity of the step-free surface from the contribution due to atomic steps, a square four-probe configuration is applied as a function of the rotation angle. In total, this combined approach leads to an atomic step conductivity of σstep=(29±9) Ω−1 m−1 and to a step-free surface conductivity of σsurf=(9±2)×10−6 Ω−1/□ for the Si(111)−(7×7) surface. |