This title appears in the Scientific Report :
2000
Please use the identifier:
http://dx.doi.org/10.1016/S0039-6028(00)00679-8 in citations.
Oxidation of CoGa(110)
Oxidation of CoGa(110)
The interaction of oxygen (O-2) with CoGa(110) has been studied by means of high-resolution electron energy loss spectroscopy (EELS), low energy electron diffraction (LEED) and Auger electron spectroscopy (AES). At 300 K, an amorphous Ga oxide grows, which transforms into an ordered structure at 770...
Saved in:
Personal Name(s): | März, A. |
---|---|
Franchy, R. | |
Contributing Institute: |
Institut für Grenzflächenforschung und Vakuumphysik; IGV |
Published in: | Surface science, 466 (2000) S. 54 |
Imprint: |
Amsterdam
Elsevier
2000
|
Physical Description: |
54 |
DOI: |
10.1016/S0039-6028(00)00679-8 |
Document Type: |
Journal Article |
Research Program: |
Struktur und Dynamik der Grenzflächen |
Series Title: |
Surface Science
466 |
Subject (ZB): | |
Publikationsportal JuSER |
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520 | |a The interaction of oxygen (O-2) with CoGa(110) has been studied by means of high-resolution electron energy loss spectroscopy (EELS), low energy electron diffraction (LEED) and Auger electron spectroscopy (AES). At 300 K, an amorphous Ga oxide grows, which transforms into an ordered structure at 770 K. A thin well-ordered Ga oxide layer also grows at this ordering temperature. The LEED pattern of the well-ordered Ga oxide corresponds to a structure with small distortion from a hexagonal arrangement. The EEL spectrum exhibits four losses at 305, 470, 605 and 745 cm(-1) which are characteristic for Ga2O3. The EEL spectrum can be reproduced by calculations based on the dielectric theory by using IR parameters of Ga2O3. The thickness of the film is estimated to be about 10 Angstrom. (C) 2000 Elsevier Science B.V. All rights reserved. | ||
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653 | 2 | 0 | |2 Author |a gallium |
653 | 2 | 0 | |2 Author |a low energy electron diffraction (LEED) |
653 | 2 | 0 | |2 Author |a oxidation |
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