This title appears in the Scientific Report : 2016 

Dependence of the SET switching variability on the initial state in HfO x -based ReRAM
La Torre, Camilla
Fleck, Karsten / Starschich, Sergej / Linn, Eike / Waser, Rainer / Menzel, Stephan (Corresponding author)
Elektronische Materialien; PGI-7
Physica status solidi / A, 213 (2015) 3, S. 316-319
Weinheim Wiley-VCH 2015
10.1002/pssa.201532375
Journal Article
Controlling Electron Charge-Based Phenomena
Please use the identifier: http://dx.doi.org/10.1002/pssa.201532375 in citations.
For any application of redox-based resistive switching devices understanding of variability is of major interest. In this work, we analyze the dependence of the SET switching time in pulse measurements of TiN/HfOx/Pt devices on the initial state before switching. The distribution of the measured SET times covers up to seven decades in one cell. A stochastic as well as a deterministic variability component are identified by relating the initial HRS resistance – obtained from a READ pulse and from the SET pulse for comparison – to the SET time. The different resulting correlations to the SET time for the two descriptions of the initial resistance are analyzed and linked to the polarity and voltage dependence of the HRS. In addition, the origin of the resistance variation is discussed.