Description: Dependence of the SET switching variability on the initial state in HfO x -based ReRAM

This title appears in the Scientific Report : 2016

Dependence of the SET switching variability on the initial state in HfO x -based ReRAM

For any application of redox-based resistive switching devices understanding of variability is of major interest. In this work, we analyze the dependence of the SET switching time in pulse measurements of TiN/HfOx/Pt devices on the initial state before switching. The distribution of the measured SET...

Personal Name(s):	La Torre, Camilla
	Fleck, Karsten / Starschich, Sergej / Linn, Eike / Waser, Rainer / Menzel, Stephan (Corresponding author)
Contributing Institute:	Elektronische Materialien; PGI-7
Published in:	Physica status solidi / A, 213 (2015) 3, S. 316-319
Imprint:	Weinheim Wiley-VCH 2015
DOI:	10.1002/pssa.201532375
Document Type:	Journal Article
Research Program:	Controlling Electron Charge-Based Phenomena
	Publikationsportal JuSER

Please use the identifier: http://dx.doi.org/10.1002/pssa.201532375 in citations.

For any application of redox-based resistive switching devices understanding of variability is of major interest. In this work, we analyze the dependence of the SET switching time in pulse measurements of TiN/HfOx/Pt devices on the initial state before switching. The distribution of the measured SET times covers up to seven decades in one cell. A stochastic as well as a deterministic variability component are identified by relating the initial HRS resistance – obtained from a READ pulse and from the SET pulse for comparison – to the SET time. The different resulting correlations to the SET time for the two descriptions of the initial resistance are analyzed and linked to the polarity and voltage dependence of the HRS. In addition, the origin of the resistance variation is discussed.