This title appears in the Scientific Report : 2016 

Memristive Phenomena –From Fundamental Physics to Neuromorphic Computing
Waser, Rainer (Editor)
Wuttig, Matthias (Editor)
Quanten-Theorie der Materialien; IAS-1
Elektronische Materialien; PGI-7
Neutronenstreuung ; Neutronenstreuung; JCNS-1
Streumethoden; JCNS-2
Jülich Forschungszentrum Jülich GmbH Zentralbibliothek, Verlag 2016
getr. Zählung
47th IFF Spring School, Jülich (Germany), 2016-02-22 - 2016-03-04
ohne Topic
Schriften des Forschungszentrums Jülich. Reihe Schlüsseltechnologien / Key Technologies 113
Please use the identifier: in citations.
Memristive phenomena combine the functionalities of electronic resistance and data memory in solid-state elements, which are able to change their resistance as a result of an electrical stimulation in a non-volatile fashion. In nanoelectronics, this functionality can be used for information storage and unconventional logic, as well as neuromorphic computing concepts that are aimed at mimicking the operation of the human brain. A multitude of fascinating memristive phenomena has emerged over the past two decades. These phenomena typically occur in oxides and higher chalcogenides and are one of the hottest topics in current solid-state research, comprising unusual phase transitions, spintronic and multiferroic tunneling effects, as well as nanoscale redox processes by local ion motion. They involve electron correlation, quantum point contact effects and exotic conformation changes at the atomic level. The Spring School provides a comprehensive introduction to and an overview of current research topics covering the physics of memristive phenomena, with an emphasis on an understanding of the underlying basic principles. The inspiration to organize this school arose from our Cooperative Research Center $\textbf{Resistively Switching Chalcogenides for Future Electronics (SFB 917)}$ which has been funded by the Deutsche Forschungsgemeinschaft since July 2011. The overarching aim of the SFB 917 is to advance the microscopic understanding of memristive phenomena utilizing changes in the atomic configuration, in particular in the phase and the valence of oxides and higher chalcogenides. To explore the full potential and pave the way for an ultimately energy-efficient electronics technology it is mandatory to realise ultrahigh scalability, fast switching kinetics and long retention times. The promise to realise fast, nonvolatile devices which may enable novel, brain-like functionalities by neuromorphic computing, defines the technological potential of the SFB. The school comprises approximately 50 hours of lectures, including discussions, as well as the opportunity to visit the participating Institutes in Forschungszentrum Jülich. All lectures will be given in English. Registered participants will receive a book of lecture notes that contains all of the material presented during the school. The lectures are grouped together in five sections, which are outlined below. [...]