This title appears in the Scientific Report : 2000 

High temperature-STM investigation of epitaxial growth of Si and Ge on silicon
Voigtländer, B.
Theuerkauf, M. N.
Institut für Grenzflächenforschung und Vakuumphysik; IGV
Structure and dynamics of heterogeneous systems / ed.: P. Entel ... - Singapore, 2000. - 981-02-4251-4. - S. 108
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Grenzflächenaspekte der Informationstechnik
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