This title appears in the Scientific Report : 2008 

The atomic hydrogen flux to silicon growth flux ratio during microcrystalline silicon solar cell deposition
Dingemans, G.
Van den Donker, M. N. / Hrunski, D. / Gordijn, A. / Kessels, W. M. M. / van de Sanden, M. C. M.
Photovoltaik; IEF-5
Applied physics letters, 93 (2008) S. 111914
Melville, NY American Institute of Physics 2008
111914
10.1063/1.2987519
Journal Article
Erneuerbare Energien
Applied Physics Letters 93
J
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OpenAccess
Please use the identifier: http://hdl.handle.net/2128/17141 in citations.
Please use the identifier: http://dx.doi.org/10.1063/1.2987519 in citations.
The H flux to Si growth flux ratio is experimentally determined under state-of-the-art silicon thin-film deposition conditions by employing the recently introduced etch product detection technique. Under the technologically relevant high-pressure depletion conditions and for different process parameter settings such as pressure, SiH4 concentration, rf power, and excitation frequency, it was demonstrated that the microcrystalline to amorphous silicon phase transition is uniquely and reactor independently determined by the flux ratio of H and Si growth species. (C) 2008 American Institute of Physics.