This title appears in the Scientific Report : 2003 

Second-harmonic generation in GaAs : experiment verus theoretical predictions of X(2)xyz
Bergfeld, S.
Daum, W.
Institut für Grenzflächen und Vakuumtechnologien; ISG-3
Physical review letters, 90 (2003) S. 036801-1
College Park, Md. APS 2003
036801-1
10.1103/PhysRevLett.90.036801
Journal Article
Materialien, Prozesse und Bauelemente für die Mikro- und Nanoelektronik
Physical Review Letters 90
J
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Please use the identifier: http://hdl.handle.net/2128/2148 in citations.
Please use the identifier: http://dx.doi.org/10.1103/PhysRevLett.90.036801 in citations.
For GaAs we have determined \chi(xyz)((2))(-2omega; omega, omega)\ in second-harmonic generation experiments using two-photon energies between 2 and 5 eV. In addition to the E-1, E-1 + Delta(1), E-0', and E-2 critical-point bulk transitions of GaAs, a surprisingly strong surface transition at 3.35 eV was observed for natively oxidized GaAs(001) samples. A detailed comparison with theoretical predictions reveals that calculations that include many-particle effects at the level of the "scissors" approximation can describe the overall frequency dependence of the second-harmonic susceptibility reasonably well.