This title appears in the Scientific Report : 2008 

Investigation of silicon contamination of Ta filaments used for thin film silicon deposition
Hrunski, D.
Schroeder, B. / Scheib, M. / Merz, R.M. / Bock, W. / Wagner, C.
Photovoltaik; IEF-5
Thin solid films, 516 (2008) S. 818 - 821
Amsterdam [u.a.] Elsevier 2008
818 - 821
10.1016/j.tsf.2007.06.207
Journal Article
Erneuerbare Energien
Thin Solid Films 516
J
Please use the identifier: http://dx.doi.org/10.1016/j.tsf.2007.06.207 in citations.
After extensive utilisation of tantalum (Ta) catalyst filaments for hot wire chemical vapor deposition (HWCVD) of thin silicon films a strong degradation takes place. A high concentration of silicon was found not only on the surface but also in the bulk of the tantalum filament. Visual microscopic investigations, Secondary Ion Mass Spectrometry (SIMS), X-ray Diffraction (XRD) and Energy Dispersive X-ray Analysis (EDX) indicate appearance of various silicides and formation of thick silicon layer (> 50 mu m) on the filament surface. The high-power backscattered scanning electron microscopy (SEM BSE) and optical microscopic analysis of the filament cross section reveal a complicated, non-uniform structure of filaments after use. By XRD a recrystallisation of tantalum kernel was detected. The EDX analysis indicates that silicides on the filament surface have the highest concentration of Si. (c) 2007 Elsevier B.V. All rights reserved.