This title appears in the Scientific Report :
2008
Please use the identifier:
http://dx.doi.org/10.1016/j.tsf.2007.06.207 in citations.
Investigation of silicon contamination of Ta filaments used for thin film silicon deposition
Investigation of silicon contamination of Ta filaments used for thin film silicon deposition
After extensive utilisation of tantalum (Ta) catalyst filaments for hot wire chemical vapor deposition (HWCVD) of thin silicon films a strong degradation takes place. A high concentration of silicon was found not only on the surface but also in the bulk of the tantalum filament. Visual microscopic i...
Saved in:
Personal Name(s): | Hrunski, D. |
---|---|
Schroeder, B. / Scheib, M. / Merz, R.M. / Bock, W. / Wagner, C. | |
Contributing Institute: |
Photovoltaik; IEF-5 |
Published in: | Thin solid films, 516 (2008) S. 818 - 821 |
Imprint: |
Amsterdam [u.a.]
Elsevier
2008
|
Physical Description: |
818 - 821 |
DOI: |
10.1016/j.tsf.2007.06.207 |
Document Type: |
Journal Article |
Research Program: |
Erneuerbare Energien |
Series Title: |
Thin Solid Films
516 |
Subject (ZB): | |
Publikationsportal JuSER |
After extensive utilisation of tantalum (Ta) catalyst filaments for hot wire chemical vapor deposition (HWCVD) of thin silicon films a strong degradation takes place. A high concentration of silicon was found not only on the surface but also in the bulk of the tantalum filament. Visual microscopic investigations, Secondary Ion Mass Spectrometry (SIMS), X-ray Diffraction (XRD) and Energy Dispersive X-ray Analysis (EDX) indicate appearance of various silicides and formation of thick silicon layer (> 50 mu m) on the filament surface. The high-power backscattered scanning electron microscopy (SEM BSE) and optical microscopic analysis of the filament cross section reveal a complicated, non-uniform structure of filaments after use. By XRD a recrystallisation of tantalum kernel was detected. The EDX analysis indicates that silicides on the filament surface have the highest concentration of Si. (c) 2007 Elsevier B.V. All rights reserved. |