This title appears in the Scientific Report :
2001
Please use the identifier:
http://dx.doi.org/10.1080/10584580108222318 in citations.
High temperature conductivity behavior of doped SrTiO3 thin films
High temperature conductivity behavior of doped SrTiO3 thin films
In order to investigate the dominant charge transport mechanisms of doped SrTiO3 thin films, high temperature measurements were performed under varying oxygen partial pressures. To meet specific demands of SrTiO3 thin films, a common 4-point measuring setup was improved profoundly by full triaxial s...
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Personal Name(s): | Ohly, C. |
---|---|
Hoffmann, S. / Szot, K. / Waser, R. | |
Contributing Institute: |
Elektrokeramische Materialien; IFF-EKM |
Published in: | Integrated ferroelectrics, 33 (2001) S. 363 |
Imprint: |
London [u.a.]
Taylor & Francis
2001
|
Physical Description: |
363 |
DOI: |
10.1080/10584580108222318 |
Document Type: |
Journal Article |
Research Program: |
Festkörperforschung für die Informationstechnik |
Series Title: |
Integrated Ferroelectrics
33 |
Subject (ZB): | |
Publikationsportal JuSER |
In order to investigate the dominant charge transport mechanisms of doped SrTiO3 thin films, high temperature measurements were performed under varying oxygen partial pressures. To meet specific demands of SrTiO3 thin films, a common 4-point measuring setup was improved profoundly by full triaxial shielding and the use of a solid state oxygen pump (made of YSZ). This allowed a precise analysis in the temperature range from 700 degreesC to 1000 degreesC and at oxygen partial pressures (pO(2)) between 10(-20) bar and 1 bar. The conduction behavior of (doped) SrTiO3 thin films. as a function of pO(2), revealed characteristics that substantially differ from those of bulk ceramics and cannot be explained by point defect chemistry. Additionally, segregation effects have been observed which lead to a restructuring of the film's morphology to a significant extent. |