This title appears in the Scientific Report : 2003 

Nanoscale dopant-induced dots and potential fluctuations in GaAs
Jäger, N. D.
Urban, K. / Weber, E. R. / Ebert, Ph.
Mikrostrukturforschung; IFF-IMF
Applied physics letters, 82 (2003) S. 2700 - 2702
Melville, NY American Institute of Physics 2003
2700 - 2702
10.1063/1.1569419
Journal Article
Kondensierte Materie
Applied Physics Letters 82
J
Get full text
OpenAccess
Please use the identifier: http://hdl.handle.net/2128/1059 in citations.
Please use the identifier: http://dx.doi.org/10.1063/1.1569419 in citations.
We identified p-type nanoscale dopant-induced dots that are formed by fluctuations of the dopant atom distribution in sufficiently thin GaAs p-n multilayers. Their electronic structure and the resulting potential variations were investigated by cross-sectional scanning tunneling microscopy and spectroscopy as a function of the number of dopant atoms within the dot. We find significant changes in the current-voltage characteristics of the dots compared to spatially nonconfined material, due to a reduced ability to screen the tip's electric field. This indicates a limited ability to deplete the dots of free holes arising from the presence of confining potentials surrounding the dopant-induced dots. (C) 2003 American Institute of Physics.