This title appears in the Scientific Report :
2003
Please use the identifier:
http://hdl.handle.net/2128/1059 in citations.
Please use the identifier: http://dx.doi.org/10.1063/1.1569419 in citations.
Nanoscale dopant-induced dots and potential fluctuations in GaAs
Nanoscale dopant-induced dots and potential fluctuations in GaAs
We identified p-type nanoscale dopant-induced dots that are formed by fluctuations of the dopant atom distribution in sufficiently thin GaAs p-n multilayers. Their electronic structure and the resulting potential variations were investigated by cross-sectional scanning tunneling microscopy and spect...
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Personal Name(s): | Jäger, N. D. |
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Urban, K. / Weber, E. R. / Ebert, Ph. | |
Contributing Institute: |
Mikrostrukturforschung; IFF-IMF |
Published in: | Applied physics letters, 82 (2003) S. 2700 - 2702 |
Imprint: |
Melville, NY
American Institute of Physics
2003
|
Physical Description: |
2700 - 2702 |
DOI: |
10.1063/1.1569419 |
Document Type: |
Journal Article |
Research Program: |
Kondensierte Materie |
Series Title: |
Applied Physics Letters
82 |
Subject (ZB): | |
Link: |
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Publikationsportal JuSER |
Please use the identifier: http://dx.doi.org/10.1063/1.1569419 in citations.
We identified p-type nanoscale dopant-induced dots that are formed by fluctuations of the dopant atom distribution in sufficiently thin GaAs p-n multilayers. Their electronic structure and the resulting potential variations were investigated by cross-sectional scanning tunneling microscopy and spectroscopy as a function of the number of dopant atoms within the dot. We find significant changes in the current-voltage characteristics of the dots compared to spatially nonconfined material, due to a reduced ability to screen the tip's electric field. This indicates a limited ability to deplete the dots of free holes arising from the presence of confining potentials surrounding the dopant-induced dots. (C) 2003 American Institute of Physics. |