This title appears in the Scientific Report :
2003
Please use the identifier:
http://hdl.handle.net/2128/1060 in citations.
Please use the identifier: http://dx.doi.org/10.1103/PhysRevB.67.165327 in citations.
Importance of carrier dynamics and conservation of momentum in atom-selective scanning tunneling microcopy imaging and bandgap determination of GaAs(110).
Importance of carrier dynamics and conservation of momentum in atom-selective scanning tunneling microcopy imaging and bandgap determination of GaAs(110).
Scanning tunneling microscopy and spectroscopy measurements on the GaAs(110) surface with complementary theoretical calculations are performed to clarify the effects involved in the tunneling of unpinned semiconductor surfaces. We show that the flatband and tip-induced band bending as well as equili...
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Personal Name(s): | Jäger, N. D. |
---|---|
Weber, E. R. / Urban, K. / Ebert, P. | |
Contributing Institute: |
Mikrostrukturforschung; IFF-IMF |
Published in: | Physical Review B Physical review / B, 67 67 (2003 2003) 16 16, S. 165327 165327 |
Imprint: |
College Park, Md.
APS
2003
|
Physical Description: |
1-10 |
DOI: |
10.1103/PhysRevB.67.165327 |
Document Type: |
Journal Article |
Research Program: |
Kondensierte Materie |
Series Title: |
Physical Review B
67 |
Subject (ZB): | |
Link: |
Get full text OpenAccess |
Publikationsportal JuSER |
Please use the identifier: http://dx.doi.org/10.1103/PhysRevB.67.165327 in citations.
Scanning tunneling microscopy and spectroscopy measurements on the GaAs(110) surface with complementary theoretical calculations are performed to clarify the effects involved in the tunneling of unpinned semiconductor surfaces. We show that the flatband and tip-induced band bending as well as equilibrium conditions are insufficient to describe the effects involved. Instead, carrier dynamics and conservation of momentum of the tunneling electrons need to be taken into account for a complete description of the contributions of the valence or conduction band states. The results allow us to understand the unique properties needed to achieve the atom-selective imaging observed on these surfaces as well as the determination of the band gap energy. |