This title appears in the Scientific Report :
2003
Please use the identifier:
http://dx.doi.org/10.1063/1.1542928 in citations.
Please use the identifier: http://hdl.handle.net/2128/2074 in citations.
Separation of hot-electron and self-heating effects in two-dimensional AlGaN/GaN-based conductivity channels
Separation of hot-electron and self-heating effects in two-dimensional AlGaN/GaN-based conductivity channels
We address experimental and theoretical study of a two-dimensional electron gas transport at low and moderate electric fields. The devices under study are group-III nitride-based (AlGaN/GaN) gateless heterostructures grown on sapphire. The transmission line model patterns of different channel length...
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Personal Name(s): | Vitusevich, S. A. |
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Danylyuk, S. V. / Klein, N. / Petrychuk, M. V. / Avksentiev, A. Yu. / Sokolov, V. N. / Kochelap, V. A. / Belyaev, A. E. / Tilak, V. / Smart, J. / Vertiatchikh, A. / Eastman, L. F. | |
Contributing Institute: |
Institut für Bio- und Chemosensoren; ISG-2 |
Published in: | Applied physics letters, 82 (2003) S. 748 - 750 |
Imprint: |
Melville, NY
American Institute of Physics
2003
|
Physical Description: |
748 - 750 |
DOI: |
10.1063/1.1542928 |
Document Type: |
Journal Article |
Research Program: |
Materialien, Prozesse und Bauelemente für die Mikro- und Nanoelektronik |
Series Title: |
Applied Physics Letters
82 |
Subject (ZB): | |
Link: |
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Publikationsportal JuSER |
Please use the identifier: http://hdl.handle.net/2128/2074 in citations.
We address experimental and theoretical study of a two-dimensional electron gas transport at low and moderate electric fields. The devices under study are group-III nitride-based (AlGaN/GaN) gateless heterostructures grown on sapphire. The transmission line model patterns of different channel lengths, L, and of the same channel width are used. A strong dependence of the device I-V characteristics on the channel length has been found. We have developed a simple theoretical model to adequately describe the observed peculiarities in the I-V characteristics measured in steady-state and pulsed (10(-6) s) regimes. The effect of the Joule heating of a heterostructure is clearly distinguished. The thermal impedance and the channel temperature rise caused by the Joule self-heating have been extracted for the devices of different L at different values of dissipated power. The current reduction due to both self-heating and hot-electron effects is determined quantitatively as a function of the electric field. (C) 2003 American Institute of Physics. |