This title appears in the Scientific Report :
2008
Please use the identifier:
http://dx.doi.org/10.1063/1.3037216 in citations.
Please use the identifier: http://hdl.handle.net/2128/17272 in citations.
Critical thickness of high structural quality SrTi03 films grown on orthorhombic (101) DySc03
Critical thickness of high structural quality SrTi03 films grown on orthorhombic (101) DySc03
Strained epitaxial SrTiO3 films were grown on orthorhombic (101) DyScO3 substrates by reactive molecular-beam epitaxy. The epitaxy of this substrate/film combination is cube on cube with a pseudocubic out-of-plane (001) orientation. The strain state and structural perfection of films with thicknesse...
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Personal Name(s): | Biegalski, M. D. |
---|---|
Fong, D.D. / Eastman, J.A. / Fuoss, P.H. / Streiffer, S.K. / Heeg, T. / Schubert, J. / Tian, W. / Nelson, T.J. / Pan, X. Q. / Hawley, M.E. / Bernhagen, M. / Reiche, P. / Uecker, R. / Trolier-McKinstry, S. / Schlom, D. G. | |
Contributing Institute: |
Halbleiter-Nanoelektronik; IBN-1 JARA-FIT; JARA-FIT |
Published in: | Journal of applied physics, 104 (2008) S. 114109 |
Imprint: |
Melville, NY
American Institute of Physics
2008
|
Physical Description: |
114109 |
DOI: |
10.1063/1.3037216 |
Document Type: |
Journal Article |
Research Program: |
Grundlagen für zukünftige Informationstechnologien |
Series Title: |
Journal of Applied Physics
104 |
Subject (ZB): | |
Link: |
Get full text OpenAccess OpenAccess |
Publikationsportal JuSER |
Please use the identifier: http://hdl.handle.net/2128/17272 in citations.
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520 | |a Strained epitaxial SrTiO3 films were grown on orthorhombic (101) DyScO3 substrates by reactive molecular-beam epitaxy. The epitaxy of this substrate/film combination is cube on cube with a pseudocubic out-of-plane (001) orientation. The strain state and structural perfection of films with thicknesses ranging from 50 to 1000 were examined using x-ray scattering. The critical thickness at which misfit dislocations was introduced was between 350 and 500. These films have the narrowest rocking curves (full width at half maximum) ever reported for any heteroepitaxial oxide film (0.0018 degrees). Only a modest amount of relaxation is seen in films exceeding the critical thicknesses even after postdeposition annealing at 700 degrees C in 1 atm of oxygen. The dependence of strain relaxation on crystallographic direction is attributed to the anisotropy of the substrate. These SrTiO3 films show structural quality more typical of semiconductors such as GaAs and silicon than perovskite materials; their structural relaxation behavior also shows similarity to that of compound semiconductor films. (c) 2008 American Institute of Physics. [DOI: 10.1063/1.3037216] | ||
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500 | |a The authors gratefully acknowledge helpful discussions with D. H. A. Blank, S. P. Baker, and V. Vaithyanathan, the use of the Center for Nanoscale Materials and Advanced Photon Source at Argonne National Laboratory, and the financial support of the National Science Foundation through Grant No. DMR-0507146, the Department of Energy through Grant No. DE-FG02-07ER46416, and the Office of Naval Research (ONR) though Grant No. N00014-03-1-0721 monitored by Dr. Colin Wood. Work at Argonne was supported by the U. S. Department of Energy, Office of Science, Basic Energy Sciences, under Contract No. DE-AC02-06CH11357. | ||
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