This title appears in the Scientific Report : 2008 

High-k dielectric layers for bioelectronic applications
Borstlap, D.
Schubert, J. / Zander, W. / Offenhäusser, A. / Ingebrandt, S.
Halbleiter-Nanoelektronik; IBN-1
JARA-FIT; JARA-FIT
Institut für Bio- und Nanosysteme - Bioelektronik; IBN-2
IEICE transactions / E / C, E91-C (2008) S. 1894 - 1898
Tokyo IEICE 2008
1894 - 1898
10.1093/ietele/e91-c.12.1894
Journal Article
Grundlagen für zukünftige Informationstechnologien
IEICE Transactions on Electronics E91-C
J
Please use the identifier: http://dx.doi.org/10.1093/ietele/e91-c.12.1894 in citations.
In many different bioelectronic applications silicon field-effect devices such as transistors or nanowires are used. Usually native or thermally grown silicon oxides serve as interfacing layer to the liquid. For an effective voltage to current conversion of the devices. the main demands for interface layers are low leakage current, low defect density, and high input capacitance. In this article we describe the fabrication and characterization of ultra-thin silicon oxide/high-kappa material stacks for bioelectronics. A combination of ultra-thin silicon oxide and DyScO3 revealed the best results. This material stack is particularly interesting for future fabrication of field-effect devices for bioelectronic applications.