This title appears in the Scientific Report :
2004
Please use the identifier:
http://dx.doi.org/10.1017/S1431927604040395 in citations.
Spherical Aberration Correction in Tandem with Exit-Plane Wave Function Reconstruction: Interlocking Tools for the Atomic Scale Imaging of Lattice Defects in GaAs
Spherical Aberration Correction in Tandem with Exit-Plane Wave Function Reconstruction: Interlocking Tools for the Atomic Scale Imaging of Lattice Defects in GaAs
With the availability of resolution boosting and delocalization minimizing techniques, for example, spherical aberration correction and exit-plane wave function reconstruction, high-resolution transmission electron microscopy is drawing to a breakthrough with respect to the atomic-scale imaging of c...
Saved in:
Personal Name(s): | Tillmann, K. |
---|---|
Thust, A. / Urban, K. | |
Contributing Institute: |
Mikrostrukturforschung; IFF-IMF |
Published in: | Microscopy and microanalysis, 10 (2004) S. 185 - 198 |
Imprint: |
New York, NY
Cambridge University Press
2004
|
Physical Description: |
185 - 198 |
PubMed ID: |
15306045 |
DOI: |
10.1017/S1431927604040395 |
Document Type: |
Journal Article |
Research Program: |
Kondensierte Materie |
Series Title: |
Microscopy and Microanalysis
10 |
Subject (ZB): | |
Publikationsportal JuSER |
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245 | |a Spherical Aberration Correction in Tandem with Exit-Plane Wave Function Reconstruction: Interlocking Tools for the Atomic Scale Imaging of Lattice Defects in GaAs | ||
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520 | |a With the availability of resolution boosting and delocalization minimizing techniques, for example, spherical aberration correction and exit-plane wave function reconstruction, high-resolution transmission electron microscopy is drawing to a breakthrough with respect to the atomic-scale imaging of common semiconductor materials. In the present study, we apply a combination of these two state-of-the-art techniques to investigate lattice defects in GaAs-based heterostructures at atomic resolution. Focusing on the direct imaging of stacking faults as well as the core structure of edge and partial dislocations, the practical capabilities of both techniques are illustrated. For the first time, we apply the technique of bright-atom contrast imaging at negative spherical aberration together with an appropriate overfocus setting for the investigation of lattice defects in a semiconductor material. For these purposes, the elastic displacements associated with lattice defects in GaAs viewed along the 110 zone axis are measured from experimental images using reciprocal space strain map algorithms. Moreover, we demonstrate the benefits of the retrieval of the exit-plane wave function not only for the elimination of residual imaging artefacts but also for the proper on-line alignment of specimens during operation of the electron microscope--a basic prerequisite to obtain a fair agreement between simulated images and experimental micrographs. | ||
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650 | 2 | |2 MeSH |a Arsenicals: chemistry | |
650 | 2 | |2 MeSH |a Electrons | |
650 | 2 | |2 MeSH |a Gallium: chemistry | |
650 | 2 | |2 MeSH |a Image Processing, Computer-Assisted: methods | |
650 | 2 | |2 MeSH |a Models, Molecular | |
650 | 2 | |2 MeSH |a Reproducibility of Results | |
650 | 2 | |2 MeSH |a Scattering, Radiation | |
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650 | 7 | |0 1303-00-0 |2 NLM Chemicals |a gallium arsenide | |
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653 | 2 | 0 | |2 Author |a spherical aberration correction |
653 | 2 | 0 | |2 Author |a negative spherical aberration imaging |
653 | 2 | 0 | |2 Author |a exit-plane wave function reconstruction |
653 | 2 | 0 | |2 Author |a lattice defects |
653 | 2 | 0 | |2 Author |a dislocation core structure |
653 | 2 | 0 | |2 Author |a gallium arsenide |
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