This title appears in the Scientific Report :
2003
Please use the identifier:
http://dx.doi.org/10.1049/ip-cds:20030636 in citations.
Stability of microcrystalline silicon for thin film solar cell applications
Stability of microcrystalline silicon for thin film solar cell applications
The development of microcrystalline silicon (muc-Si:H) for solar cells has made good progress with efficiencies better than those of amorphous silicon (a-Si:H) devices. Of particular interest is the absence of light-induced degradation in highly crystalline muc-Si:H. However, the highest efficiencie...
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Personal Name(s): | Finger, F. |
---|---|
Carius, R. / Dylla, T. / Klein, S. / Okur, S. / Günes, M. | |
Contributing Institute: |
Institut für Photovoltaik; IPV |
Published in: | IEE proceedings / Circuits, devices and systems, 150 (2003) S. 300 - 308 |
Imprint: |
London
Institution of Electrical Engineers
2003
|
Physical Description: |
300 - 308 |
DOI: |
10.1049/ip-cds:20030636 |
Document Type: |
Journal Article |
Research Program: |
Photovoltaik |
Series Title: |
IEE Proceedings - Circuits, Devices and Systems
150 |
Subject (ZB): | |
Publikationsportal JuSER |
The development of microcrystalline silicon (muc-Si:H) for solar cells has made good progress with efficiencies better than those of amorphous silicon (a-Si:H) devices. Of particular interest is the absence of light-induced degradation in highly crystalline muc-Si:H. However, the highest efficiencies are obtained with material which may still include a-Si:H regions and light-induced changes may be expected in such material. On the other hand, material of high crystallinity is susceptible to in-diffusion of atmospheric gases which, through adsorption or oxidation, affect the electronic transport. Investigations are presented of such effects concerning the stability of muc-Si:H films and solar cells prepared by plasma-enhanced chemical vapour deposition and hot wire chemical vapour deposition. |