This title appears in the Scientific Report :
2003
Please use the identifier:
http://dx.doi.org/10.1023/A:1026147624811 in citations.
Photoconductivity spectroscopy in hydrogenated microcrystalline silicon thin films
Photoconductivity spectroscopy in hydrogenated microcrystalline silicon thin films
Steady-state photoconductivity and sub-bandgap absorption measurements by the dual-beam photoconductivity (DBP) method were carried out on undoped hydrogenated microcrystalline silicon thin films prepared by VHF-PECVD and hot-wire chemical vapor deposition. The results are compared with those of the...
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Personal Name(s): | Günes, M. |
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Akdas, D. / Göktas, O. / Carius, R. / Klomfass, J. / Finger, F. | |
Contributing Institute: |
Institut für Photovoltaik; IPV |
Published in: | Journal of materials science / Materials in electronics, 14 (2003) S. 729 - 730 |
Imprint: |
Dordrecht [u.a.]
Springer Science + Business Media B.V
2003
|
Physical Description: |
729 - 730 |
DOI: |
10.1023/A:1026147624811 |
Document Type: |
Journal Article |
Research Program: |
Photovoltaik |
Series Title: |
Journal of Materials Science - Materials in Electronics
14 |
Subject (ZB): | |
Publikationsportal JuSER |
Steady-state photoconductivity and sub-bandgap absorption measurements by the dual-beam photoconductivity (DBP) method were carried out on undoped hydrogenated microcrystalline silicon thin films prepared by VHF-PECVD and hot-wire chemical vapor deposition. The results are compared with those of the constant-photocurrent method (CPM) and photothermal deflection spectroscopy (PDS). It is found that DBP, CPM, and PDS provide complementary data on the optoelectronic processes in microcrystalline silicon. (C) 2003 Kluwer Academic Publishers. |