This title appears in the Scientific Report : 2003 

Resistive switching in metal-ferroelectric-metal junctions
Rodriguez-Contreras, J.
Kohlstedt, H. / Poppe, U. / Waser, R. / Buchal, Ch. / Pertsev, N. A.
Mikrostrukturforschung; IFF-IMF
Applied physics letters, 83 (2003) S. 4595
Melville, NY American Institute of Physics 2003
4595
10.1063/1.1627944
Journal Article
Kondensierte Materie
Applied Physics Letters 83
J
Get full text
OpenAccess
Please use the identifier: http://dx.doi.org/10.1063/1.1627944 in citations.
Please use the identifier: http://hdl.handle.net/2128/1062 in citations.
The aim of this work is to investigate the electron transport through metal-ferroelectric-metal (MFM) junctions with ultrathin barriers in order to determine its dependence on the polarization state of the barrier. To that end, heteroepitaxial Pt/Pb(Zr0.52Ti0.48)O-3/SrRuO3 junctions have been fabricated on lattice-matched SrTiO3 substrates. The current-voltage (I-V) characteristics of the MFM junctions involving a few-nanometer-thick Pb(Zr0.52Ti0.48)O-3 barriers have been recorded at temperatures between 4.2 K and 300 K. Typical I-V curves exhibit reproducible switching events at well-defined electric fields. The mechanism of charge transport through ultrathin barriers and the origin of the observed resistive switching effect are discussed. (C) 2003 American Institute of Physics.