This title appears in the Scientific Report : 2003 

Scanning tunneling microscopy study of epitaxial growth of Si and Ge on Silicon during growth
Voigtländer, B.
Institut für Grenzflächen und Vakuumtechnologien; ISG-3
Physics at Surfaces and Interfaces / ed. B.N. Dev. - World Scientific, 2003. - 981-238-575-4. -S. 84
2003
981-238-575-4
Contribution to a book
Contribution to a conference proceedings
Kondensierte Materie
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