This title appears in the Scientific Report :
2003
Scanning tunneling microscopy study of epitaxial growth of Si and Ge on Silicon during growth
Scanning tunneling microscopy study of epitaxial growth of Si and Ge on Silicon during growth
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Personal Name(s): | Voigtländer, B. |
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Contributing Institute: |
Institut für Grenzflächen und Vakuumtechnologien; ISG-3 |
Published in: |
Physics at Surfaces and Interfaces / ed. B.N. Dev. - World Scientific, 2003. - 981-238-575-4. -S. 84 |
Imprint: |
2003
|
ISBN: |
981-238-575-4 |
Document Type: |
Contribution to a book Contribution to a conference proceedings |
Research Program: |
Kondensierte Materie |
Publikationsportal JuSER |
Description not available. |