This title appears in the Scientific Report :
2003
Fundamental processes in Si/Si and Ge/Si epitaxy studied by scanning tunneling microscopy
Fundamental processes in Si/Si and Ge/Si epitaxy studied by scanning tunneling microscopy
Saved in:
Personal Name(s): | Voigtländer, B. |
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Contributing Institute: |
Institut für Grenzflächen und Vakuumtechnologien; ISG-3 |
Published in: |
Seminar Talk at Research Center CA E S AR |
Imprint: |
2003
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Conference: | Bonn, Germany 2003-08-26 |
Document Type: |
Talk (non-conference) |
Research Program: |
Kondensierte Materie |
Publikationsportal JuSER |
Description not available. |