This title appears in the Scientific Report : 2004 

Light-induced modification of a-SiOx (II): Laser crystallisation
Janotta, A.
Dikce, Y. / Schmidt, M. / Eisele, C. / Stutzmann, M. / Luysberg, M. / Houben, L.
Mikrostrukturforschung; IFF-IMF
Journal of applied physics, 95 (2004) S. 4060
Melville, NY American Institute of Physics 2004
4060
10.1063/1.1667008
Journal Article
Kondensierte Materie
Journal of Applied Physics 95
J
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OpenAccess
Please use the identifier: http://hdl.handle.net/2128/1065 in citations.
Please use the identifier: http://dx.doi.org/10.1063/1.1667008 in citations.
Amorphous hydrogenated silicon suboxides (a-SiOx:H) were deposited by plasma enhanced chemical vapor deposition from the source gases SiH4, H-2, and CO2. The band gap of the samples can be tuned from 1.9 to 3.0 eV by varying the oxygen content from 0 to 50 at. %. H-effused samples were irradiated by ultraviolet laser pulses with intensities up to 480 mJ/cm2. The structural changes and the crystallization behavior were investigated as a function of oxygen content and laser intensity. A decrease of the melting threshold by a factor of two with increasing oxygen content (0-44 at. %) was observed for the SiOx samples. Above the respective melting thresholds, not only a deterioration of the structural properties but also indications of a segregation of Si crystallites were found. Raman spectroscopy and transmission electron microscopy gave evidence for the existence of Si crystallites up to oxygen contents of 40 at. %. The crystal size reached an optimum for oxygen concentrations between 10 and 30 at. %. (C) 2004 American Institute of Physics.