This title appears in the Scientific Report :
2004
Please use the identifier:
http://hdl.handle.net/2128/1065 in citations.
Please use the identifier: http://dx.doi.org/10.1063/1.1667008 in citations.
Light-induced modification of a-SiOx (II): Laser crystallisation
Light-induced modification of a-SiOx (II): Laser crystallisation
Amorphous hydrogenated silicon suboxides (a-SiOx:H) were deposited by plasma enhanced chemical vapor deposition from the source gases SiH4, H-2, and CO2. The band gap of the samples can be tuned from 1.9 to 3.0 eV by varying the oxygen content from 0 to 50 at. %. H-effused samples were irradiated by...
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Personal Name(s): | Janotta, A. |
---|---|
Dikce, Y. / Schmidt, M. / Eisele, C. / Stutzmann, M. / Luysberg, M. / Houben, L. | |
Contributing Institute: |
Mikrostrukturforschung; IFF-IMF |
Published in: | Journal of applied physics, 95 (2004) S. 4060 |
Imprint: |
Melville, NY
American Institute of Physics
2004
|
Physical Description: |
4060 |
DOI: |
10.1063/1.1667008 |
Document Type: |
Journal Article |
Research Program: |
Kondensierte Materie |
Series Title: |
Journal of Applied Physics
95 |
Subject (ZB): | |
Link: |
Get full text OpenAccess |
Publikationsportal JuSER |
Please use the identifier: http://dx.doi.org/10.1063/1.1667008 in citations.
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520 | |a Amorphous hydrogenated silicon suboxides (a-SiOx:H) were deposited by plasma enhanced chemical vapor deposition from the source gases SiH4, H-2, and CO2. The band gap of the samples can be tuned from 1.9 to 3.0 eV by varying the oxygen content from 0 to 50 at. %. H-effused samples were irradiated by ultraviolet laser pulses with intensities up to 480 mJ/cm2. The structural changes and the crystallization behavior were investigated as a function of oxygen content and laser intensity. A decrease of the melting threshold by a factor of two with increasing oxygen content (0-44 at. %) was observed for the SiOx samples. Above the respective melting thresholds, not only a deterioration of the structural properties but also indications of a segregation of Si crystallites were found. Raman spectroscopy and transmission electron microscopy gave evidence for the existence of Si crystallites up to oxygen contents of 40 at. %. The crystal size reached an optimum for oxygen concentrations between 10 and 30 at. %. (C) 2004 American Institute of Physics. | ||
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