This title appears in the Scientific Report :
2008
Please use the identifier:
http://dx.doi.org/10.1063/1.3026743 in citations.
Please use the identifier: http://hdl.handle.net/2128/17203 in citations.
Surface states and origin of the Fermi level pinning on nonpolar GaN(1100) surfaces
Surface states and origin of the Fermi level pinning on nonpolar GaN(1100) surfaces
GaN1000 cleavage surfaces were investigated by cross-sectional scanning tunneling microscopy and spectroscopy. It is found that both the N and Ga derived intrinsic dangling bond surface states are outside of the fundamental band gap. Their band edges are both located at the Gamma point of the surfac...
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Personal Name(s): | Ivanova, L. |
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Borisova, S. / Eisele, H. / Dähne, M. / Laubsch, A. / Ebert, Ph. | |
Contributing Institute: |
Mikrostrukturforschung; IFF-8 |
Published in: | Applied physics letters, 93 (2008) S. 92110 |
Imprint: |
Melville, NY
American Institute of Physics
2008
|
Physical Description: |
92110 |
DOI: |
10.1063/1.3026743 |
Document Type: |
Journal Article |
Research Program: |
Kondensierte Materie |
Series Title: |
Applied Physics Letters
93 |
Subject (ZB): | |
Link: |
Get full text OpenAccess OpenAccess |
Publikationsportal JuSER |
Please use the identifier: http://hdl.handle.net/2128/17203 in citations.
GaN1000 cleavage surfaces were investigated by cross-sectional scanning tunneling microscopy and spectroscopy. It is found that both the N and Ga derived intrinsic dangling bond surface states are outside of the fundamental band gap. Their band edges are both located at the Gamma point of the surface Brillouin zone. The observed Fermi level pinning at 1.0 eV below the conduction band edge is attributed to the high step and defect density at the surface but not to intrinsic surface states. |