This title appears in the Scientific Report :
1999
Strain relaxed Si(1-x)Gex layers on Si(100) after hydrogen implantation and annealing
Strain relaxed Si(1-x)Gex layers on Si(100) after hydrogen implantation and annealing
Saved in:
Personal Name(s): | Mantl, S. |
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Contributing Institute: |
Institut für Schicht- und Ionentechnik; ISI |
Published in: |
Bell Laboratory : Lucent Technology |
Imprint: |
1999
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Conference: | Murray Hill 1999-12-06 00:00:00 |
Document Type: |
Talk (non-conference) |
Research Program: |
Ionentechnik |
Publikationsportal JuSER |
Description not available. |