This title appears in the Scientific Report :
2005
Please use the identifier:
http://hdl.handle.net/2128/183 in citations.
Metallorganische Gasphasenabscheidung (MOCVD) oxidischer Dünnschichten aus dem Materialsystem Barium-Titanat-Zirkonat für integrierte Kondensatoren
Metallorganische Gasphasenabscheidung (MOCVD) oxidischer Dünnschichten aus dem Materialsystem Barium-Titanat-Zirkonat für integrierte Kondensatoren
This thesis targets for the first time at the growth of high-quality layers of the alternative high-k material barium titanate zirconate (Ba(Ti$_{1-x}$Zr$_{x}$)O$_{3}$) via an MOCVD process. Their dielectric attributes will be characterized in the light of possible applications such as integrated ca...
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Personal Name(s): | Ganster, Ralf (Corresponding author) |
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Contributing Institute: |
Elektronische Materialien; IFF-IEM Center of Nanoelectronic Systems for Information Technology; CNI |
Imprint: |
Jülich
Forschungszentrum Jülich GmbH Zentralbibliothek, Verlag
2004
|
Physical Description: |
X, 176 S. |
Dissertation Note: |
Aachen, Techn. Hochsch., Diss., 2004 |
Document Type: |
Book Dissertation / PhD Thesis |
Research Program: |
Materialien, Prozesse und Bauelemente für die Mikro- und Nanoelektronik |
Series Title: |
Berichte des Forschungszentrums Jülich
4153 |
Subject (ZB): | |
Link: |
OpenAccess |
Publikationsportal JuSER |
This thesis targets for the first time at the growth of high-quality layers of the alternative high-k material barium titanate zirconate (Ba(Ti$_{1-x}$Zr$_{x}$)O$_{3}$) via an MOCVD process. Their dielectric attributes will be characterized in the light of possible applications such as integrated capacitors for memory chips and tunable microwave antennas. It is of pivotal importance to understand the MOCVD process itself but the growth of Ba(Ti$_{1-x}$Zr$_{x}$)O$_{3}$ layers as well in order to discuss relationships between microstructure and electrical results. The understanding of MOCVD is also devoted to the chemistry of precursors and furthermore to evaporation and decomposition. One of the priorities of this work was the integration of the novel TriJet™ vaporizer for liquid organic precursors within the built-up of a new MOCVD laboratory system based on a horizontal reactor (AIX-200) provided by AIXTRON. All free process parameters had to be adjusted and optimised both for the material and the new set of non-standard precursors regarding the MOCVD system. Growth was improved in terms of reproducible BTZ films with a high quality. Taking low dielectric losses (tan $\delta$ = 0,005) and tunabilities between 20 – 50 % at dielectric constants of about 200 into account the final characteristics of Ba(Ti$_{0.76}$Zr$_{0.24}$)O$_{3}$ films exceed significantly values of BTZ films found in literature that were fabricated by CSD or sputtering. |