This title appears in the Scientific Report :
2001
A comparison of the material properties of AlGaN/GaN epilayers for HEMT application grown on different sapphire substrates
A comparison of the material properties of AlGaN/GaN epilayers for HEMT application grown on different sapphire substrates
Saved in:
Personal Name(s): | Nastase, N. |
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Hardtdegen, H. / Bay, H. / Lüth, H. / Alam, A. / Heuken, M. | |
Contributing Institute: |
Institut für Halbleiterschichten und Bauelemente; ISG-1 |
Published in: |
16. Workshop des DGKK-Arbeitskreises Epitaxie von III/V-Halbleitern |
Imprint: |
2001
|
Conference: | Berlin 2001-12-06 |
Document Type: |
Talk (non-conference) |
Research Program: |
Ionentechnik Halbleiterschichtsysteme und Mesoskopische Strukturen |
Publikationsportal JuSER |
Description not available. |